SI4884BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4884BDY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 160 nS
   Cossⓘ - Capacitancia de salida: 295 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SO-8

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SI4884BDY Datasheet (PDF)

..1. Size:254K vishay
si4884bdy.pdf

Si4884BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0090 at VGS = 10 V 16.5 TrenchFET Power MOSFETs30 10.5 nC PWM Optimized0.012 at VGS = 4.5 V 13.2SO-8 DSD1 8 SD2 7 SD3 6 GGD4 5 Top View SOrdering Information: Si

8.1. Size:69K vishay
si4884dy.pdf

Si4884DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0105 @ VGS = 10 V 1230300.0165 @ VGS = 4.5 V 10D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4884DYSi4884DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Param

9.1. Size:224K vishay
si4888dy.pdf

Si4888DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.007 at VGS = 10 V 16 TrenchFET Power MOSFET300.010 at VGS = 4.5 V 13 High-Efficiency PWM Optimized 100 % Rg Tested SO-8DS D1 8S2 7 DS 3 6 DGG4 5 DTop ViewS

9.2. Size:590K vishay
si4886dy.pdf

Si4886DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.010 at VGS = 10 V 13 TrenchFET Power MOSFETs300.0135 at VGS = 4.5 V 11 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECSO-8DSD1 8S D2 7S D3

9.3. Size:65K vishay
si4882dy.pdf

Si4882DYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0105 @ VGS = 10 V "1130300.0205 @ VGS = 4.5 V "8D D D DSO-8SD1 8SD2 7GSD3 6GD N-Channel MOSFET4 5Top ViewS S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30V

9.4. Size:243K vishay
si4880dy.pdf

Si4880DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0085 at VGS = 10 V 13 TrenchFET Power MOSFETS300.014 at VGS = 4.5 V 10 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECDSO-8SD1 8S D2 7S

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RFD16N05L

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