SI4884BDY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4884BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16.5 nC
trⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 295 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SO-8
SI4884BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4884BDY Datasheet (PDF)
si4884bdy.pdf
Si4884BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0090 at VGS = 10 V 16.5 TrenchFET Power MOSFETs30 10.5 nC PWM Optimized0.012 at VGS = 4.5 V 13.2SO-8 DSD1 8 SD2 7 SD3 6 GGD4 5 Top View SOrdering Information: Si
si4884dy.pdf
Si4884DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0105 @ VGS = 10 V 1230300.0165 @ VGS = 4.5 V 10D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4884DYSi4884DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Param
si4888dy.pdf
Si4888DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.007 at VGS = 10 V 16 TrenchFET Power MOSFET300.010 at VGS = 4.5 V 13 High-Efficiency PWM Optimized 100 % Rg Tested SO-8DS D1 8S2 7 DS 3 6 DGG4 5 DTop ViewS
si4886dy.pdf
Si4886DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.010 at VGS = 10 V 13 TrenchFET Power MOSFETs300.0135 at VGS = 4.5 V 11 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECSO-8DSD1 8S D2 7S D3
si4882dy.pdf
Si4882DYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0105 @ VGS = 10 V "1130300.0205 @ VGS = 4.5 V "8D D D DSO-8SD1 8SD2 7GSD3 6GD N-Channel MOSFET4 5Top ViewS S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30V
si4880dy.pdf
Si4880DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0085 at VGS = 10 V 13 TrenchFET Power MOSFETS300.014 at VGS = 4.5 V 10 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECDSO-8SD1 8S D2 7S
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
