SI5447DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI5447DC
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.076 Ohm
Paquete / Cubierta: 1206-8
Búsqueda de reemplazo de MOSFET SI5447DC
SI5447DC Datasheet (PDF)
si5447dc.pdf
Si5447DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.076 at VGS = - 4.5 V - 4.8 TrenchFET Power MOSFETs: 1.8 V Rated0.110 at VGS = - 2.5 V - 20 - 4.00.160 at VGS = - 1.8 V - 3.31206-8 ChipFETS1DD DD DGMarking CodeD GBG XXSLot Traceab
si5443dc.pdf
Si5443DCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.065 at VGS = - 4.5 V 4.9 TrenchFET Power MOSFETs: 2.5 V Rated0.074 at VGS = - 3.6 V - 20 4.60.110 at VGS = - 2.5 V 3.81206 -8 ChipFET S1 D D D D D GMarking CodeD G BB XX Lot
si5445bdc.pdf
Si5445BDCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.033 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.043 at VGS = - 2.5 V - 6.2 14- 80.060 at VGS = - 1.8 V - 5.31206-8 ChipFET1DSD DD DMarking CodeD GGBM XXSLot Traceability
si5441dc.pdf
Si5441DCVishay SiliconixP-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.055 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET0.06 at VGS = - 3.6 V - 5.1 11 2.5 V Rated- 20 Compliant to RoHS Directive 2002/95/EC0.083 at VGS = - 2.5 V - 4.31206-8 ChipFET1
si5441bdc.pdf
Si5441BDCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.045 at VGS = - 4.5 V - 6.1 TrenchFET Power MOSFET0.052 at VGS = - 3.6 V - 5.7 11.5- 200.080 at VGS = - 2.5 V - 4.61206-8 ChipFET1DSD DD DMarking CodeD GGBK XXSLot Traceabil
si5449dc.pdf
Si5449DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.085 at VGS = - 4.5 V - 4.3 TrenchFET Power MOSFETs: 2.5 V Rated- 300.135 at VGS = - 2.5 V - 3.41206-8 ChipFETS1 D D D D D GMarking CodeD G BH XX Lot Traceability S and Date Code
si5440dc.pdf
New ProductSi5440DCVishay Siliconix N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.019 at VGS = 10 V 630 9 nCAPPLICATIONS0.024 at VGS = 4.5 V 6 Load Switches- Notebook PC1206-8 ChipFET1DDD DD DD GGSSBottom ViewN-Channel
si5445dc.pdf
Si5445DCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) () ID (A)0.035 @ VGS = --4.5 V7.1--8 0.047 @ VGS = --2.5 V 6.20.062 @ VGS = --1.8 V 5.7S1206-8 ChipFETt1DGD DD DMarking CodeD GBC XXSLot Traceabilityand Date CodePart # CodeDBottom ViewP-Channel MOSFETOrdering Information: Si5445DC-T1ABSOLUTE MAXIM
si5442du.pdf
Si5442DUVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thermally Enhanced PowerPAKChipFET Package0.0100 at VGS = 4.5 V 25- Small Footprint Area- Low On-Resistance0.0115 at VGS = 2.5 V 2520 16.6 nC- Thin 0.8 mm Profile0.0135 at VGS = 1.8 V 25 100% Rg Tested
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SI5855CDC | PJU5NA50 | PE5G5EA
History: SI5855CDC | PJU5NA50 | PE5G5EA
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918