SI5458DU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI5458DU Datasheet (PDF)

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New ProductSi5458DUVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d, e Qg (Typ.)Definition0.041 at VGS = 10 V 6 TrenchFET Power MOSFET30 2.8 nC 100 % Rg Tested0.051 at VGS = 4.5 V 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK ChipFET Singl

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Si5456DUVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = 10 V 12 TrenchFET Gen III Power MOSFET20 9.8 nC0.0135 at VGS = 4.5 V 12 New Thermally Enhanced PowerPAKChipFET Package- Small Footprint AreaPowerPAK ChipFET Single-

9.2. Size:152K vishay
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New ProductSi5459DUVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.052 at VGS = - 4.5 V - 8e TrenchFET Power MOSFET- 20 8 100 % Rg Tested0.082 at VGS = - 2.5 V - 7.5 Compliant to RoHS Directive 2002/95/ECPowerPAK ChipFET SingleAPPLICA

9.3. Size:235K vishay
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New ProductSi5457DCVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET- 20 0.041 at VGS = - 3.6 V - 6a 12.5 nC 100 % Rg Tested0.056 at VGS = - 2.5 V - 6a Compliant to RoHS Directive 2002/95/EC1206

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