All MOSFET. SI5458DU Datasheet

 

SI5458DU Datasheet and Replacement


   Type Designator: SI5458DU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: POWERPAK
 

 SI5458DU substitution

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SI5458DU Datasheet (PDF)

 ..1. Size:152K  vishay
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SI5458DU

New ProductSi5458DUVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d, e Qg (Typ.)Definition0.041 at VGS = 10 V 6 TrenchFET Power MOSFET30 2.8 nC 100 % Rg Tested0.051 at VGS = 4.5 V 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK ChipFET Singl

 9.1. Size:150K  vishay
si5456du.pdf pdf_icon

SI5458DU

Si5456DUVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = 10 V 12 TrenchFET Gen III Power MOSFET20 9.8 nC0.0135 at VGS = 4.5 V 12 New Thermally Enhanced PowerPAKChipFET Package- Small Footprint AreaPowerPAK ChipFET Single-

 9.2. Size:152K  vishay
si5459du.pdf pdf_icon

SI5458DU

New ProductSi5459DUVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.052 at VGS = - 4.5 V - 8e TrenchFET Power MOSFET- 20 8 100 % Rg Tested0.082 at VGS = - 2.5 V - 7.5 Compliant to RoHS Directive 2002/95/ECPowerPAK ChipFET SingleAPPLICA

 9.3. Size:235K  vishay
si5457dc.pdf pdf_icon

SI5458DU

New ProductSi5457DCVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET- 20 0.041 at VGS = - 3.6 V - 6a 12.5 nC 100 % Rg Tested0.056 at VGS = - 2.5 V - 6a Compliant to RoHS Directive 2002/95/EC1206

Datasheet: SI5441DC , SI5442DU , SI5443DC , SI5445BDC , SI5447DC , SI5449DC , SI5456DU , SI5457DC , BS170 , SI5459DU , SI5461EDC , SI5463EDC , SI5468DC , SI5471DC , SI5475BDC , SI5475DC , SI5475DDC .

History: IRFB260NPBF | STB26NM60N | SRM6N60TF | NCEP033N85D | SMN09L20D | NCE3008Y | IPP080N06NG

Keywords - SI5458DU MOSFET datasheet

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