IRFS251 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS251
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 128(max) nC
   trⓘ - Tiempo de subida: 100(max) nS
   Cossⓘ - Capacitancia de salida: 533 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TO3PF

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IRFS251 Datasheet (PDF)

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irfs250 irfs251.pdf

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irfs254a.pdf

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irfs250a.pdf

IRFS250AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 21.3 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymb

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irfs254b.pdf

November 2001IRFS254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

8.4. Size:655K fairchild semi
irfs250b.pdf

November 2001IRFS250B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has been especially tailored to Fas

8.5. Size:234K fairchild semi
irfs254.pdf

IRFS254FEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 16 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 250V Low RDS(ON): 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteris

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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