SI5857DU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI5857DU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: POWERPAK

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SI5857DU Datasheet (PDF)

..1. Size:154K vishay
si5857du.pdf

Si5857DUVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.058 at VGS = - 4.5 V 6 LITTLE FOOT Plus Power MOSFET- 20 5.5 nC0.100 at VGS = - 2.5 V 6 New Thermally Enhanced PowerPAK ChipFET PackageSCHOTTKY PRODUCT S

9.1. Size:172K vishay
si5853dc.pdf

Si5853DCVishay SiliconixP-Channel 1.8 V (G-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.110 at VGS = - 4.5 V - 3.6 LITTLE FOOT Plus0.160 at VGS = - 2.5 V - 20 - 3.0 Compliant to RoHS Directive 2002/95/EC0.240 at VGS = - 1.8 V - 2.4SCHOTTKY PRODUCT SUMMARY

9.2. Size:175K vishay
si5855dc.pdf

Si5855DCVishay SiliconixP-Channel 1.8 V (G-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.110 at VGS = - 4.5 V - 3.6 TrenchFET Power MOSFETs0.160 at VGS = - 2.5 V - 20 - 3.0 Ultra Low Vf Schottky0.240 at VGS = - 1.8 V - 2.4 Si5853DC Pin Compatible C

9.3. Size:163K vishay
si5858du.pdf

Si5858DUVishay SiliconixN-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = 4.5 V 6 LITTLE FOOT Plus Power MOSFET0.045 at VGS = 2.5 V 20 6 6 nC New Thermally Enhanced PowerPAK0.055 at VGS = 1.8 V ChipFET Package6- Sm

9.4. Size:193K vishay
si5855cdc.pdf

Si5855CDCVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition LITTLE FOOT Plus Power MOSFET0.144 at VGS = - 4.5 V - 3.7 Ultra Low VF Schottky0.180 at VGS = - 2.5 V - 3.3 4.1 nC- 20 Compliant to RoHS Directive 2002/95/EC

9.5. Size:180K vishay
si5856dc.pdf

Si5856DCVishay SiliconixN-Channel 1.8 V (G-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs0.045 at VGS = 2.5 V 20 5.6 Ultra Low RDS(on)0.052 at VGS = 1.8 V 5.2 Ultra Low VF Schottky Si5853DC Pin Compatib

9.6. Size:254K vishay
si5853.pdf

Shen zhen TuoFeng Semiconductor Techonlogy co., LTDSI5853P-Channel Enhancement Mode MOSFET with Schottky DiodeFEATUREAPPLICATIONS MOSFET Battery Powered System -20V/-3.5A, RDS(ON) 110m @VGS = -4.5V Notebook Power Management -20V/-2.4A, RDS(ON) 160m@VGS = -2.5V Cell Phone SCHOTTKY VKA = 20V, VF=0.4V(Typ.)@ IF = 0.5A Full RoHS compliance

9.7. Size:130K vishay
si5853cdc.pdf

Si5853CDCVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.104 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET- 20 0.144 at VGS = - 2.5 V - 3.6 4.2 nC Compliant to RoHS Directive 2002/95/EC0.205 at VGS = - 1.8 V

9.8. Size:190K vishay
si5853ddc.pdf

Si5853DDCVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.105 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET- 20 0.143 at VGS = - 2.5 V - 3.8 4.7 nC Compliant to RoHS Directive 2002/95/EC0.188 at VGS = - 1.8 V

9.9. Size:189K vishay
si5853dd.pdf

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