SI6435ADQ Todos los transistores

 

SI6435ADQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI6435ADQ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.05 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TSSOP-8

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SI6435ADQ Datasheet (PDF)

 ..1. Size:198K  vishay
si6435adq.pdf pdf_icon

SI6435ADQ

Si6435ADQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.030 at VGS = - 10 V 5.5 - 30 RoHS 0.055 at VGS = - 4.5 V 4.1 COMPLIANT S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6435ADQ S S 3 6 G D 4 5 D Top View P-Channel MO

 0.1. Size:864K  cn vbsemi
si6435adq-t1.pdf pdf_icon

SI6435ADQ

SI6435ADQ-T1 www.VBsemi.tw P-Channel 20-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = - 4.5 V Available - 9.0 RoHS* 0.015 at VGS = - 2.5 V -20 - 7.8 COMPLIANT 0.020 at VGS = - 1.8 V - 6.0 S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 S S 3

 9.1. Size:65K  vishay
si6433dq.pdf pdf_icon

SI6435ADQ

Si6433DQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.06 @ VGS = 4.5 V "4.0 12 12 0.09 @ VGS = 2.5 V "3.0 S* TSSOP-8 G D D 1 8 D * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 Si6433DQ S S 3 6 G D 4 5 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Sy

 9.2. Size:53K  vishay
si6436dq.pdf pdf_icon

SI6435ADQ

Si6436DQ N-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 30 30 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 1 8 D D D *Source Pins 2, 3, 6 and 7 S 2 7 S must be tied common. Si6436DQ G S 3 6 S G 4 5 D Top View S* N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Sourc

Otros transistores... SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , 12N60 , SI6443DQ , SI6459BDQ , SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ , SI6469DQ , SI6473DQ .

History: SI6466ADQ | SI6463BDQ

 

 
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