SI6435ADQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI6435ADQ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.05 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TSSOP-8

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SI6435ADQ Datasheet (PDF)

..1. Size:198K vishay
si6435adq.pdf

Si6435ADQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.030 at VGS = - 10 V 5.5- 30RoHS0.055 at VGS = - 4.5 V 4.1COMPLIANTS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6435ADQS S3 6G D4 5DTop ViewP-Channel MO

0.1. Size:864K cn vbsemi
si6435adq-t1.pdf

SI6435ADQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3

9.1. Size:65K vishay
si6433dq.pdf

Si6433DQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.06 @ VGS = 4.5 V "4.012120.09 @ VGS = 2.5 V "3.0S*TSSOP-8GD D1 8D* Source Pins 2, 3, 6 and 7 S S must be tied common.2 7Si6433DQS S3 6G D4 5Top ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

9.2. Size:53K vishay
si6436dq.pdf

Si6436DQN-Channel 30-V (D-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.045 @ VGS = 10 V "4.430300.070 @ VGS = 4.5 V "3.5DTSSOP-81 8D DD*Source Pins 2, 3, 6 and 7 S 2 7 Smust be tied common.Si6436DQ GS 3 6 SG 4 5 DTop ViewS*N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Sourc

9.3. Size:204K vishay
si6433bdq.pdf

Si6433BDQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)0.040 at VGS = - 4.5 V - 4.8- 12RoHS0.070 at VGS = - 2.5 V - 3.6COMPLIANTS*TSSOP-8G* Source Pins 2, 3, 6 and 7 D D1 8must be tied common.S S2 7S S3 6G D4 5Top View DOrdering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free a

9.4. Size:59K vishay
si6434dq.pdf

Si6434DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.028 @ VGS = 10 V 5.630300.042 @ VGS = 4.5 V 4.5DTSSOP-8D D1 8D * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7GS S3 6G D4 5Top ViewS*Ordering Information: Si6434DQ-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C

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