Справочник MOSFET. SI6435ADQ

 

SI6435ADQ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI6435ADQ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.05 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   trⓘ - Время нарастания: 10 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TSSOP-8

 Аналог (замена) для SI6435ADQ

 

 

SI6435ADQ Datasheet (PDF)

 ..1. Size:198K  vishay
 si6435adq.pdf

SI6435ADQ SI6435ADQ

Si6435ADQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.030 at VGS = - 10 V 5.5- 30RoHS0.055 at VGS = - 4.5 V 4.1COMPLIANTS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6435ADQS S3 6G D4 5DTop ViewP-Channel MO

 0.1. Size:864K  cn vbsemi
 si6435adq-t1.pdf

SI6435ADQ SI6435ADQ

SI6435ADQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3

 9.1. Size:65K  vishay
 si6433dq.pdf

SI6435ADQ SI6435ADQ

Si6433DQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.06 @ VGS = 4.5 V "4.012120.09 @ VGS = 2.5 V "3.0S*TSSOP-8GD D1 8D* Source Pins 2, 3, 6 and 7 S S must be tied common.2 7Si6433DQS S3 6G D4 5Top ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

 9.2. Size:53K  vishay
 si6436dq.pdf

SI6435ADQ SI6435ADQ

Si6436DQN-Channel 30-V (D-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.045 @ VGS = 10 V "4.430300.070 @ VGS = 4.5 V "3.5DTSSOP-81 8D DD*Source Pins 2, 3, 6 and 7 S 2 7 Smust be tied common.Si6436DQ GS 3 6 SG 4 5 DTop ViewS*N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Sourc

 9.3. Size:204K  vishay
 si6433bdq.pdf

SI6435ADQ SI6435ADQ

Si6433BDQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)0.040 at VGS = - 4.5 V - 4.8- 12RoHS0.070 at VGS = - 2.5 V - 3.6COMPLIANTS*TSSOP-8G* Source Pins 2, 3, 6 and 7 D D1 8must be tied common.S S2 7S S3 6G D4 5Top View DOrdering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free a

 9.4. Size:59K  vishay
 si6434dq.pdf

SI6435ADQ SI6435ADQ

Si6434DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.028 @ VGS = 10 V 5.630300.042 @ VGS = 4.5 V 4.5DTSSOP-8D D1 8D * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7GS S3 6G D4 5Top ViewS*Ordering Information: Si6434DQ-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMPB8XN | DMP3050LVT

 

 
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