SI6954ADQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI6954ADQ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
   Paquete / Cubierta: TSSOP-8

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SI6954ADQ Datasheet (PDF)

..1. Size:213K vishay
si6954adq.pdf

Si6954ADQVishay SiliconixN-Channel 2.5-V (G-S) Battery SwitchFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs: 2.5 V Rated0.053 at VGS = 10 V 3.430RoHS0.075 at VGS = 4.5 V 2.9COMPLIANTD1 D2TSSOP-8D1 1 D28G1 G2S1 2 S27S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETOrdering I

8.1. Size:53K vishay
si6954dq.pdf

Si6954DQVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 10 V "3.930300.095 @ VGS = 4.5 V "3.1D1 D2TSSOP-8D1 1 D D28S1 2 S27Si6954DQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-S

9.1. Size:68K vishay
si6955dq.pdf

Si6955DQVishay SiliconixDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) RDS(ON) (W) ID (A)0.085 @ VGS = 10 V "2.530300.19 @ VGS = 4.5 V "1.8S1 S2TSSOP-8D1 1 D D2 G1 G28S1 2 S27Si6955DQS1 3 S26G1 4 G25Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED)PARAMETER SYMBOL LIMIT UNI

9.2. Size:68K vishay
si6956dq.pdf

Si6956DQVishay SiliconixDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.09 @ VGS = 10 V "2.520200.175 @ VGS = 4.5 V "1.8D1 D2TSSOP-8D1 1 D D28S1 2 S27Si6956DQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-So

9.3. Size:52K vishay
si6953dq.pdf

Si6953DQVishay SiliconixDual P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.17 @ VGS = 10 V "1.920200.32 @ VGS = 4.5 V "1.3S1 S2TSSOP-8D1 1 D D2 G1 G28S1 2 S27Si6953DQS1 3 S26G1 4 G25Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Uni

9.4. Size:211K vishay
si6955adq.pdf

Si6955ADQVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.080 at VGS = - 10 V 2.9- 30RoHS0.135 at VGS = - 4.5 V 2.2COMPLIANTS1 S2G1 G2TSSOP-8D1 1 D28S1 2 S27Si6955ADQS1 3 S26G1 4 G25D1 D2Top ViewOrdering Information: Si6955ADQ-T1-GE3

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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