SI7457DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7457DP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 28 nC
   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: POWERPAK-SO-8

Búsqueda de reemplazo de MOSFET SI7457DP

SI7457DP Datasheet (PDF)

..1. Size:469K vishay
si7457dp.pdf

Si7457DPVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.042 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 100 67 nC0.045 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2S3G4GD8D7D6D5Bottom ViewDOrdering I

9.1. Size:126K vishay
si7456cdp.pdf

New ProductSi7456CDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0235 at VGS = 10 V 27.5 TrenchFET Power MOSFET 100 % Rg Tested0.0245 at VGS = 7.5 V 100 27 7.7 nC 100 % UIS Tested0.0315 at VGS = 4.5 V 24 Compliant to RoHS D

9.2. Size:139K vishay
si7456dp.pdf

Si7456DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.025 at VGS = 10 V 9.3 TrenchFET Power MOSFETs1000.028 at VGS = 6.0 V New Low Thermal Resistance PowerPAK8.8Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Test

9.3. Size:476K vishay
si7454cdp.pdf

New ProductSi7454CDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0305 at VGS = 10 V 22 TrenchFET Power MOSFET 100 % Rg Tested0.033 at VGS = 7.5 V 100 21 9.5 nC 100 % UIS Tested0.043 at VGS = 4.5 V 18.5 Compliant to RoHS Di

9.4. Size:462K vishay
si7459dp.pdf

Si7459DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0068 at VGS = - 10 V - 30 - 22 TrenchFET Power MOSFETs New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile APPLICATIONS Battery and Load Switching- Notebook ComputersPowerPAK

9.5. Size:161K vishay
si7454dp.pdf

Si7454DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFETs1000.040 at VGS = 6.0 V 7.2 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg T

9.6. Size:481K vishay
si7450dp.pdf

Si7450DPVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.080 at VGS = 10 V 5.3 TrenchFET Power MOSFETs2000.090 at VGS = 6 V 5.0 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tes

9.7. Size:510K vishay
si7454ddp.pdf

New ProductSi7454DDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization: For definitions of compliance0.033 at VGS = 10 V 21please see www.vishay.com/doc?999120.036 at VGS = 7.5 V 100 20 6.1 nCAPPLICATIONS0.047 at VGS =

9.8. Size:464K vishay
si7452dp.pdf

Si7452DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0083 at VGS = 10 V 60 19.3 105 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg Tested High Threshold Voltage At Hi

9.9. Size:477K vishay
si7456ddp.pdf

New ProductSi7456DDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.023 at VGS = 10 V 27.8 Material categorization:For definitions of compliance please see0.024 at VGS = 7.5 V 100 27.2 9.7 nCwww.vishay.com/doc?999120.031 at VGS = 4.5 V

9.10. Size:469K vishay
si7455dp.pdf

Si7455DPVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.025 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 80 65 nC0.029 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2GS3G4D8D7D6DD5Bottom View P-Channel MOS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: