SI7457DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI7457DP
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 5.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.9 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 28 nC
trⓘ - Время нарастания: 115 ns
Cossⓘ - Выходная емкость: 230 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
Тип корпуса: POWERPAK-SO-8
SI7457DP Datasheet (PDF)
si7457dp.pdf
Si7457DPVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.042 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 100 67 nC0.045 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2S3G4GD8D7D6D5Bottom ViewDOrdering I
si7456cdp.pdf
New ProductSi7456CDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0235 at VGS = 10 V 27.5 TrenchFET Power MOSFET 100 % Rg Tested0.0245 at VGS = 7.5 V 100 27 7.7 nC 100 % UIS Tested0.0315 at VGS = 4.5 V 24 Compliant to RoHS D
si7456dp.pdf
Si7456DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.025 at VGS = 10 V 9.3 TrenchFET Power MOSFETs1000.028 at VGS = 6.0 V New Low Thermal Resistance PowerPAK8.8Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Test
si7454cdp.pdf
New ProductSi7454CDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0305 at VGS = 10 V 22 TrenchFET Power MOSFET 100 % Rg Tested0.033 at VGS = 7.5 V 100 21 9.5 nC 100 % UIS Tested0.043 at VGS = 4.5 V 18.5 Compliant to RoHS Di
si7459dp.pdf
Si7459DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0068 at VGS = - 10 V - 30 - 22 TrenchFET Power MOSFETs New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile APPLICATIONS Battery and Load Switching- Notebook ComputersPowerPAK
si7454dp.pdf
Si7454DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFETs1000.040 at VGS = 6.0 V 7.2 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg T
si7450dp.pdf
Si7450DPVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.080 at VGS = 10 V 5.3 TrenchFET Power MOSFETs2000.090 at VGS = 6 V 5.0 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tes
si7454ddp.pdf
New ProductSi7454DDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization: For definitions of compliance0.033 at VGS = 10 V 21please see www.vishay.com/doc?999120.036 at VGS = 7.5 V 100 20 6.1 nCAPPLICATIONS0.047 at VGS =
si7452dp.pdf
Si7452DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0083 at VGS = 10 V 60 19.3 105 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile 100 % Rg Tested High Threshold Voltage At Hi
si7456ddp.pdf
New ProductSi7456DDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.023 at VGS = 10 V 27.8 Material categorization:For definitions of compliance please see0.024 at VGS = 7.5 V 100 27.2 9.7 nCwww.vishay.com/doc?999120.031 at VGS = 4.5 V
si7455dp.pdf
Si7455DPVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.025 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 80 65 nC0.029 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2GS3G4D8D7D6DD5Bottom View P-Channel MOS
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918