SI7617DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7617DN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 13.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0123 Ohm
   Paquete / Cubierta: POWERPAK-1212-8

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SI7617DN Datasheet (PDF)

..1. Size:576K vishay
si7617dn.pdf

New ProductSi7617DNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)d, g Qg (Typ.)Definition0.0123 at VGS = - 10 V - 35 TrenchFET Power MOSFET- 30 20.5 nC0.0222 at VGS = - 4.5 V - 35 100% Rg Tested 100% UIS TestedPowerPAK 1212-8 Compliant to RoHS Directi

9.1. Size:122K vishay
si7619dn.pdf

New ProductSi7619DNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.021 at VGS = - 10 V - 24e- 30 15 nC 100 % Rg Tested0.034 at VGS = - 4.5 V - 18.7 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directiv

9.2. Size:639K vishay
si7615cdn.pdf

Si7615CDNwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen III p-channel power MOSFETD8D7 RDS(on) rating at VGS = -1.8 VD65 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912112SS3SAPPLICATIONSS4S1G

9.3. Size:122K vishay
si7615dn.pdf

New ProductSi7615DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0039 at VGS = - 10 V - 35a TrenchFET Gen III P-Channel Power MOSFET0.0055 at VGS = - 4.5 V - 20 100 % Rg Tested- 35a 62 nC 100 % UIS Tested0.0098 at VGS = - 2.5 V - 35a

9.4. Size:566K vishay
si7613dn.pdf

New ProductSi7613DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.)Definition0.0087 at VGS = - 10 V - 35 TrenchFET Power MOSFET- 20 28.1 nC Low Thermal Resistance PowerPAK0.014 at VGS = - 4.5V - 35Package with Small Size and Low 1.07 mm Profile

9.5. Size:565K vishay
si7611dn.pdf

New ProductSi7611DNVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.025 at VGS = - 10 V - 18e Low Thermal Resistance PowerPAKRoHS- 40 41 nCPackage with Small Size and Low 1.07 mm COMPLIANT0.033 at VGS = - 4.5V - 18eProfile 100 % Rg and UIS TestedAPPLI

9.6. Size:548K vishay
si7615adn.pdf

New ProductSi7615ADNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0044 at VGS = - 10 V - 35a Material categorization:0.0060 at VGS = - 4.5 V - 20- 35a 59 nCFor definitions of compliance please see0.0098 at VGS = - 2.5 V

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