SI7794DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI7794DP Datasheet (PDF)

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New ProductSi7794DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0034 at VGS = 10 V SkyFET Monolithic TrenchFET Gen III 6030 23 nCPower MOSFET and Schottky Diode0.0042 at VGS = 4.5 V 60 100 % Rg Tested 100 % Aval

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New ProductSi7792DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition SkyFET Monolithic TrenchFET Gen III 0.0021 at VGS = 10 V 6030 41 nC Power MOSFET and Schottky Diode0.0026 at VGS = 4.5 V 60 100 % Rg Tested 100 % Av

9.2. Size:509K vishay
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New ProductSi7790DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0045 at VGS = 10 V 50 100 % Rg and UIS TestedCOMPLIANT 40 29 nC0.006 at VGS = 4.5 V 50APPLICATIONSPowerPAK SO-8 DC/DC ConverterD S 6.15 mm 5.15 mm 1 S 2

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