SI7852DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si7852DPVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0165 at VGS = 10 V TrenchFET Power MOSFETS12.580 New Low Thermal Resistance PowerPAK0.022 at VGS = 6 V 10.9Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested

Si7852ADPVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.017 at VGS = 10 V 30 TrenchFET Power MOSFET80 30.50.021 at VGS = 8 V 30 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8APPLICATIONSS6.15 mm 5.15 mmD1 Primary Side Sw

Si7852ADPVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.017 at VGS = 10 V 30 TrenchFET Power MOSFET80 30.50.021 at VGS = 8 V 30 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8APPLICATIONSS6.15 mm 5.15 mmD1 Primary Side Sw

Si7850DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.022 at VGS = 10 V 10.3 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 8.7 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching

Si7858ADPVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0026 at VGS = 4.5 V 29 New Low Thermal Resistance PowerPAK COMPLIANT12 540.0037 at VGS = 2.5 V 23Package with Low 1.07 mm Profile 100 % Rg Tested PowerPAK SO-8 APPLICATIONS

New ProductSi7858BDPVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 4.5 V 40 TrenchFET Power MOSFET12 0.0030 at VGS = 2.5 V 40 56 nC 100 % Rg Tested0.0037 at VGS = 1.8 V 40 100 % UIS Tested Compliant to RoHS Directive 200

Si7856ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.)Available TrenchFET Power MOSFET0.0037 at VGS = 10 V 25RoHS* Optimized for Low Side Synchronous 30 39COMPLIANT0.0048 at VGS = 4.5 V 23 Rectifier Operation New Low Thermal Resistance PowerPAK Package with

SI7850DPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYAvailableVDS (V) 60 TrenchFET Power MOSFETRDS(on) max. () at VGS = 10 V 0.024 100 % Rg TestedRDS(on) max. () at VGS = 4.5 V 0.028 100 % UIS TestedQg typ. (nC) 5.2ID (A) 15a, gAPPLICATIONSConfiguration Single Battery Switch