SI7862ADP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7862ADP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 16 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 2180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: POWERPAK-SO-8

Búsqueda de reemplazo de MOSFET SI7862ADP

SI7862ADP Datasheet (PDF)

..1. Size:461K vishay
si7862adp.pdf

Si7862ADPVishay SiliconixN-Channel 16-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETS: 2.5 V RatedRoHS0.003 at VGS = 4.5 V 29COMPLIANT Low 3.3 m RDS(on)16 540.0055 at VGS = 2.5 V 23 Low Gate Resistance 100 % Rg Tested APPLICATIONSPowerPAK SO-8 Synchron

9.1. Size:465K vishay
si7860adp si7880adp.pdf

Si7860ADPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0095 at VGS = 10 V 16 TrenchFET Power MOSFET300.0125 at VGS = 4.5 V PWM Optimized for High Efficiency16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile

9.2. Size:462K vishay
si7860ad.pdf

9.3. Size:80K vishay
si7864adp.pdf

Si7864ADPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETS: 2.5 V RatedRoHS0.003 at VGS = 4.5 V 29COMPLIANT Low 3.5 m RDS(on)20 570.0042 at VGS = 2.5 V 25 PWM (Qgd and Rg) Optimized 100 % Rg TestedAPPLICATIONSPowerPAK SO-8 Low

9.4. Size:467K vishay
si7866adp.pdf

Si7866ADPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0024 at VGS = 10 V 40 Low RDS(on)COMPLIANT20 39 nC0.0030 at VGS = 4.5 V 40 PWM (Qgd and Rg) Optimized 100 % Rg TestedPowerPAK SO-8APPLICATIONS Low-Side MOSFET in Syn

9.5. Size:468K vishay
si7868adp.pdf

Si7868ADPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.00225 at VGS = 10 V 40COMPLIANT Low RDS(on)20 46 nC0.00275 at VGS = 4.5 V 40 PWM (Qgd and Rg) Optimized 100 % Rg TestedPowerPAK SO-8APPLICATIONS Low Output Voltage

9.6. Size:47K vishay
si7866dp.pdf

Si7866DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESD TrenchFETr Power MOSFETPRODUCT SUMMARYD Low rDS(on)D PWM (Qgd and Rg) OptimizedVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0025 @ VGS = 10 V 29APPLICATIONS20200.00375 @ VGS = 4.5 V 25D Low-Side MOSFET in Synchronous BuckDC/DC Converters in DesktopsD Low Output Voltage Synchronous RectifierPowerPAKr

9.7. Size:463K vishay
si7860dp.pdf

Si7860DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.008 at VGS = 10 V 18 TrenchFET Power MOSFET30 PWM Optimized for High Efficiency0.011 at VGS = 4.5 V 15 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile

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