AOD452A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD452A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Tiempo de subida (tr): 13.8 nS
Conductancia de drenaje-sustrato (Cd): 275 pF
Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET AOD452A
AOD452A Datasheet (PDF)
aod452a.pdf
AOD452AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD452A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON)
aod454.pdf
AOD454N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD454 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 12 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod456.pdf
AOD456N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD456 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 50A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod450.pdf
AOD450200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD450 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 3.8AThis device is suitable for use in inverter, load switching RDS(ON) (at VGS=10V)
aod458.pdf
AOD458250V,14A N-Channel MOSFETGeneral Description Product SummaryThe AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high 300V@150 VDSlevels of performance and robustness in popular AC-DC 14A ID (at VGS=10V)applications.By providing low RDS(on), Ciss and Crss along
aod456a.pdf
AOD456N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD456 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 50A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod4504.pdf
AOD4504200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD4504 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
aod454a.pdf
AOD454AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD454A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20A (VGS = 10V)charge. With the excellent thermal resistance of theRDS(ON)
aod456.pdf
AOD456www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet
aod456.pdf
isc N-Channel MOSFET Transistor AOD456FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod450.pdf
isc N-Channel MOSFET Transistor AOD450FEATURESDrain Current I = 3.8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aod458.pdf
isc N-Channel MOSFET Transistor AOD458FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aod4504.pdf
isc N-Channel MOSFET Transistor AOD4504FEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod454a.pdf
isc N-Channel MOSFET Transistor AOD454AFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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