AOD452A
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Наименование прибора: AOD452A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 55
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 13.8
ns
Cossⓘ - Выходная емкость: 275
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008
Ohm
Тип корпуса:
TO252
Аналог (замена) для AOD452A
AOD452A
Datasheet (PDF)
..1. Size:153K aosemi
aod452a.pdf 
AOD452AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD452A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON)
9.1. Size:200K aosemi
aod454.pdf 
AOD454N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD454 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 12 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
9.2. Size:193K aosemi
aod456.pdf 
AOD456N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD456 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 50A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
9.3. Size:242K aosemi
aod450.pdf 
AOD450200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD450 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 3.8AThis device is suitable for use in inverter, load switching RDS(ON) (at VGS=10V)
9.4. Size:261K aosemi
aod458.pdf 
AOD458250V,14A N-Channel MOSFETGeneral Description Product SummaryThe AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high 300V@150 VDSlevels of performance and robustness in popular AC-DC 14A ID (at VGS=10V)applications.By providing low RDS(on), Ciss and Crss along
9.5. Size:193K aosemi
aod456a.pdf 
AOD456N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD456 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 50A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
9.6. Size:285K aosemi
aod4504.pdf 
AOD4504200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD4504 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
9.7. Size:683K aosemi
aod450a70.pdf 
AOD450A70/AOI450A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
9.8. Size:193K aosemi
aod454a.pdf 
AOD454AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD454A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20A (VGS = 10V)charge. With the excellent thermal resistance of theRDS(ON)
9.9. Size:1361K cn vbsemi
aod456.pdf 
AOD456www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet
9.10. Size:265K inchange semiconductor
aod456.pdf 
isc N-Channel MOSFET Transistor AOD456FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.11. Size:265K inchange semiconductor
aod450.pdf 
isc N-Channel MOSFET Transistor AOD450FEATURESDrain Current I = 3.8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.12. Size:265K inchange semiconductor
aod458.pdf 
isc N-Channel MOSFET Transistor AOD458FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.13. Size:265K inchange semiconductor
aod4504.pdf 
isc N-Channel MOSFET Transistor AOD4504FEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.14. Size:265K inchange semiconductor
aod454a.pdf 
isc N-Channel MOSFET Transistor AOD454AFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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