AOD452A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD452A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 25 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 55 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 13.8 ns
Выходная емкость (Cd): 275 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO252
AOD452A Datasheet (PDF)
aod452a.pdf
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AOD452AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD452A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON)
aod454.pdf
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AOD454N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD454 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 12 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod456.pdf
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AOD456N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD456 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 50A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod450.pdf
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AOD450200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD450 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 3.8AThis device is suitable for use in inverter, load switching RDS(ON) (at VGS=10V)
aod458.pdf
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AOD458250V,14A N-Channel MOSFETGeneral Description Product SummaryThe AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high 300V@150 VDSlevels of performance and robustness in popular AC-DC 14A ID (at VGS=10V)applications.By providing low RDS(on), Ciss and Crss along
aod456a.pdf
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AOD456N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD456 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 50A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod4504.pdf
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AOD4504200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD4504 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
aod454a.pdf
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AOD454AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD454A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20A (VGS = 10V)charge. With the excellent thermal resistance of theRDS(ON)
aod456.pdf
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AOD456www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet
aod456.pdf
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isc N-Channel MOSFET Transistor AOD456FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod450.pdf
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isc N-Channel MOSFET Transistor AOD450FEATURESDrain Current I = 3.8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aod458.pdf
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isc N-Channel MOSFET Transistor AOD458FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aod4504.pdf
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isc N-Channel MOSFET Transistor AOD4504FEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod454a.pdf
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isc N-Channel MOSFET Transistor AOD454AFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![AOD452A](https://alltransistors.com/images/us.png)
![AOD452A](https://alltransistors.com/images/es.png)
![AOD452A](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C