HY1906B Todos los transistores

 

HY1906B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY1906B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 876 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO-263

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HY1906B datasheet

 ..1. Size:2269K  hymexa
hy1906p hy1906b.pdf pdf_icon

HY1906B

HY1906P/B N-Channel Enhancement Mode MOSFET Features Pin Description / , 60V 120 A 6.0 (typ.) @ VGS=10V RDS(ON)= m Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available S D G (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Power Management for Inverter Systems. G N-Channel MOSFET S Ordering and Marking

 8.1. Size:712K  1
hy1906c2.pdf pdf_icon

HY1906B

HY1906C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/70A D D D D D D D D RDS(ON)= 5.7 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe

 9.1. Size:1085K  1
hy1904c2.pdf pdf_icon

HY1906B

HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/65A RDS(ON)= 5.1m (typ.)@VGS = 10V D D D D D D D D RDS(ON)= 6.2m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe

 9.2. Size:1637K  hymexa
hy1904d hy1904u hy1904v.pdf pdf_icon

HY1906B

HY1904D/U/V N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/72A RDS(ON)= 4.8m (typ.)@VGS = 10V RDS(ON)= 5.8m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MOSFET

Otros transistores... JCS7N65CB , JCS7N65FB , MDF13N65B , AOD452A , APM2030N , CEP603AL , CEB603AL , HY1906P , IRFP250 , IRFP640 , MMD70R900P , N6004NZ , PHP45N03LTA , PHB45N03LTA , PHD45N03LTA , RU190N08 , RU190N08Q .

History: AGM215TS

 

 

 


History: AGM215TS

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