HY1906B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY1906B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 188 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 876 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de HY1906B MOSFET
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HY1906B datasheet
hy1906p hy1906b.pdf
HY1906P/B N-Channel Enhancement Mode MOSFET Features Pin Description / , 60V 120 A 6.0 (typ.) @ VGS=10V RDS(ON)= m Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available S D G (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Power Management for Inverter Systems. G N-Channel MOSFET S Ordering and Marking
hy1906c2.pdf
HY1906C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/70A D D D D D D D D RDS(ON)= 5.7 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe
hy1904c2.pdf
HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/65A RDS(ON)= 5.1m (typ.)@VGS = 10V D D D D D D D D RDS(ON)= 6.2m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe
hy1904d hy1904u hy1904v.pdf
HY1904D/U/V N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/72A RDS(ON)= 4.8m (typ.)@VGS = 10V RDS(ON)= 5.8m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MOSFET
Otros transistores... JCS7N65CB , JCS7N65FB , MDF13N65B , AOD452A , APM2030N , CEP603AL , CEB603AL , HY1906P , IRFP250 , IRFP640 , MMD70R900P , N6004NZ , PHP45N03LTA , PHB45N03LTA , PHD45N03LTA , RU190N08 , RU190N08Q .
History: AGM215TS
History: AGM215TS
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