Справочник MOSFET. HY1906B

 

HY1906B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HY1906B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 188 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 876 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для HY1906B

 

 

HY1906B Datasheet (PDF)

 ..1. Size:2269K  hymexa
 hy1906p hy1906b.pdf

HY1906B HY1906B

HY1906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description/ , 60V 120 A6.0 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking

 8.1. Size:712K  1
 hy1906c2.pdf

HY1906B HY1906B

HY1906C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/70AD D D D D D D DRDS(ON)= 5.7 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe

 9.1. Size:1085K  1
 hy1904c2.pdf

HY1906B HY1906B

HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe

 9.2. Size:1637K  hymexa
 hy1904d hy1904u hy1904v.pdf

HY1906B HY1906B

HY1904D/U/V N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/72A RDS(ON)= 4.8m(typ.)@VGS = 10V RDS(ON)= 5.8m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MOSFET

 9.3. Size:1085K  hymexa
 hy1904c2.pdf

HY1906B HY1906B

HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe

 9.4. Size:1317K  hymexa
 hy1908p hy1908m hy1908b hy1908mf hy1908ps hy1908pm.pdf

HY1906B HY1906B

HY1908P/M/B/ MF /PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/90A RDS(ON)= 7m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power management for inverter systems TO-220MF-3L TO-3PS-3L TO-3PM-

 9.5. Size:4518K  hymexa
 hy1908d hy1908u hy1908s.pdf

HY1906B HY1906B

HY1908D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/90A,7.8 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and RuggedSSDDG Lead Free and Green Devices AvailableG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Informatio

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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