MDD1903RH Todos los transistores

 ..1. Size:802K  magnachip
 mdd1903rh.pdf

MDD1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDD1903 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 12.8A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1903 is suitable device for DC to DC

 ..2. Size:287K  inchange semiconductor
 mdd1903rh.pdf

isc N-Channel MOSFET Transistor MDD1903RH FEATURES Drain Current I = 12.8A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.1. Size:881K  magnachip
 mdd1902rh.pdf

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChip s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDD1902 is suitable device for DC/DC

 8.2. Size:841K  magnachip
 mdd1901rh.pdf

MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChip s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDD1901 is suitable device for DC/DC

 8.3. Size:992K  magnachip
 mdd1904rh.pdf

MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 10.8A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1904 is suitable device for DC to DC

 8.4. Size:818K  cn vbsemi
 mdd1902rh.pdf

MDD1902RH www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle