MDD5N40RH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDD5N40RH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 46 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de MDD5N40RH MOSFET
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MDD5N40RH datasheet
mdd5n40rh mdi5n40th.pdf
MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachip s MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur
mdd5n50frh.pdf
MDD5N50F N-Channel MOSFET 500V, 4.2 A, 1.55 General Description Features The MDD5N50F uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 4.2A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.5 @VGS = 10V excellent quality. MDD5N50F is suitable device for Power Supply, Applications PFC and gen
mdd5n50zrh.pdf
MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50Z uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and I = 4.4A @V = 10V D GS excellent quality. R 1.4 @V = 10V DS(ON) GS MDD5N50Z is suitable device for SMPS, HID and general pur
mdd5n50rh.pdf
MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 4.4A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applicatio
Otros transistores... MDD3752ARH , MDD3752RH , MDD3754RH , MDD3N40RH , MDD3N50GRH , MDD4N20YRH , MDD4N25RH , MDD4N60BRH , IRFP064N , MDD5N50FRH , MDD5N50RH , MDD5N50ZRH , MDD6N60GRH , MDD7N20CRH , MDD7N25RH , MDD9N40RH , MDE1752RH .
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