MDD5N40RH - описание и поиск аналогов

 

MDD5N40RH. Аналоги и основные параметры

Наименование производителя: MDD5N40RH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 46 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm

Тип корпуса: TO-252

Аналог (замена) для MDD5N40RH

- подборⓘ MOSFET транзистора по параметрам

 

MDD5N40RH даташит

 ..1. Size:865K  magnachip
mdd5n40rh mdi5n40th.pdfpdf_icon

MDD5N40RH

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachip s MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur

 9.1. Size:928K  magnachip
mdd5n50frh.pdfpdf_icon

MDD5N40RH

MDD5N50F N-Channel MOSFET 500V, 4.2 A, 1.55 General Description Features The MDD5N50F uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 4.2A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.5 @VGS = 10V excellent quality. MDD5N50F is suitable device for Power Supply, Applications PFC and gen

 9.2. Size:770K  magnachip
mdd5n50zrh.pdfpdf_icon

MDD5N40RH

MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50Z uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and I = 4.4A @V = 10V D GS excellent quality. R 1.4 @V = 10V DS(ON) GS MDD5N50Z is suitable device for SMPS, HID and general pur

 9.3. Size:919K  magnachip
mdd5n50rh.pdfpdf_icon

MDD5N40RH

MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 4.4A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applicatio

Другие MOSFET... MDD3752ARH , MDD3752RH , MDD3754RH , MDD3N40RH , MDD3N50GRH , MDD4N20YRH , MDD4N25RH , MDD4N60BRH , IRFP064N , MDD5N50FRH , MDD5N50RH , MDD5N50ZRH , MDD6N60GRH , MDD7N20CRH , MDD7N25RH , MDD9N40RH , MDE1752RH .

History: LSGE15R085W3

 

 

 

 

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