MDD5N50FRH Todos los transistores

 

MDD5N50FRH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDD5N50FRH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm

Encapsulados: TO-252

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MDD5N50FRH datasheet

 ..1. Size:928K  magnachip
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MDD5N50FRH

MDD5N50F N-Channel MOSFET 500V, 4.2 A, 1.55 General Description Features The MDD5N50F uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 4.2A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.5 @VGS = 10V excellent quality. MDD5N50F is suitable device for Power Supply, Applications PFC and gen

 7.1. Size:770K  magnachip
mdd5n50zrh.pdf pdf_icon

MDD5N50FRH

MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50Z uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and I = 4.4A @V = 10V D GS excellent quality. R 1.4 @V = 10V DS(ON) GS MDD5N50Z is suitable device for SMPS, HID and general pur

 7.2. Size:919K  magnachip
mdd5n50rh.pdf pdf_icon

MDD5N50FRH

MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 4.4A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applicatio

 9.1. Size:865K  magnachip
mdd5n40rh mdi5n40th.pdf pdf_icon

MDD5N50FRH

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachip s MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur

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