MDD5N50ZRH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MDD5N50ZRH Datasheet (PDF)

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MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50Z uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and I = 4.4A @V = 10V D GSexcellent quality. R 1.4 @V = 10V DS(ON) GSMDD5N50Z is suitable device for SMPS, HID and general pur

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MDD5N50F N-Channel MOSFET 500V, 4.2 A, 1.55 General Description Features The MDD5N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.2A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.5 @VGS = 10V excellent quality. MDD5N50F is suitable device for Power Supply, Applications PFC and gen

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MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applicatio

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MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachips MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur

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