MDD5N50ZRH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MDD5N50ZRH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 12.2 nC
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 65 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-252
Аналог (замена) для MDD5N50ZRH
MDD5N50ZRH Datasheet (PDF)
mdd5n50zrh.pdf

MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50Z uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and I = 4.4A @V = 10V D GSexcellent quality. R 1.4 @V = 10V DS(ON) GSMDD5N50Z is suitable device for SMPS, HID and general pur
mdd5n50frh.pdf

MDD5N50F N-Channel MOSFET 500V, 4.2 A, 1.55 General Description Features The MDD5N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.2A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.5 @VGS = 10V excellent quality. MDD5N50F is suitable device for Power Supply, Applications PFC and gen
mdd5n50rh.pdf

MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applicatio
mdd5n40rh mdi5n40th.pdf

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachips MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APQ14SN65AF | KF5N60F
History: APQ14SN65AF | KF5N60F



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