MDF12N50BTH Todos los transistores

 

MDF12N50BTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDF12N50BTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 126 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO-220F

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MDF12N50BTH datasheet

 ..1. Size:1149K  magnachip
 mdf12n50bth mdp12n50bth.pdf pdf_icon

MDF12N50BTH

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65 General Description Features The MDP/F12N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc

 6.1. Size:1068K  magnachip
 mdf12n50fth mdp12n50fth.pdf pdf_icon

MDF12N50BTH

MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

Otros transistores... MDD9N40RH , MDE1752RH , MDF10N50TH , MDF10N60BTH , MDF10N60GTH , MDF10N65BTH , MDF11N60TH , MDF11N65BTH , IRLZ44N , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH , MDF13N65BTH , MDF15N60GTH , MDF16N50GTH , MDF18N50BTH , MDF1903TH .

History: MSA4P21 | BLF7G20LS-200 | MDF13N50BTH | MDF13N50GTH

 

 

 

 

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