MDF12N50BTH PDF and Equivalents Search

 

MDF12N50BTH Specs and Replacement

Type Designator: MDF12N50BTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO-220F

MDF12N50BTH substitution

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MDF12N50BTH datasheet

 ..1. Size:1149K  magnachip
 mdf12n50bth mdp12n50bth.pdf pdf_icon

MDF12N50BTH

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65 General Description Features The MDP/F12N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc... See More ⇒

 6.1. Size:1068K  magnachip
 mdf12n50fth mdp12n50fth.pdf pdf_icon

MDF12N50BTH

MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic... See More ⇒

Detailed specifications: MDD9N40RH, MDE1752RH, MDF10N50TH, MDF10N60BTH, MDF10N60GTH, MDF10N65BTH, MDF11N60TH, MDF11N65BTH, IRLZ44N, MDF12N50FTH, MDF13N50BTH, MDF13N50GTH, MDF13N65BTH, MDF15N60GTH, MDF16N50GTH, MDF18N50BTH, MDF1903TH

Keywords - MDF12N50BTH MOSFET specs

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