MDF13N50BTH Todos los transistores

 

MDF13N50BTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDF13N50BTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 174 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO-220F
 

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MDF13N50BTH Datasheet (PDF)

 ..1. Size:1209K  magnachip
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MDF13N50BTH

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5General Description Features The MDP/F13N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

 6.1. Size:1131K  magnachip
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MDF13N50BTH

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 8.1. Size:811K  magnachip
 mdf13n65bth.pdf pdf_icon

MDF13N50BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 8.2. Size:830K  magnachip
 mdf13n65b.pdf pdf_icon

MDF13N50BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

MOSTRAR MÁS

Otros transistores... MDF10N50TH , MDF10N60BTH , MDF10N60GTH , MDF10N65BTH , MDF11N60TH , MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , IRF630 , MDF13N50GTH , MDF13N65BTH , MDF15N60GTH , MDF16N50GTH , MDF18N50BTH , MDF1903TH , MDF2N60BTH , MDF2N60TH .

History: IXTH130N10T

 

 
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