MDF13N50BTH - описание и поиск аналогов

 

MDF13N50BTH. Аналоги и основные параметры

Наименование производителя: MDF13N50BTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 41 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 47 ns

Cossⓘ - Выходная емкость: 174 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm

Тип корпуса: TO-220F

Аналог (замена) для MDF13N50BTH

- подборⓘ MOSFET транзистора по параметрам

 

MDF13N50BTH даташит

 ..1. Size:1209K  magnachip
 mdf13n50bth mdp13n50bth.pdf pdf_icon

MDF13N50BTH

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5 General Description Features The MDP/F13N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

 6.1. Size:1131K  magnachip
 mdf13n50gth mdp13n50gth.pdf pdf_icon

MDF13N50BTH

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip s MOSFET Technology, which provides low on- ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 8.1. Size:811K  magnachip
 mdf13n65bth.pdf pdf_icon

MDF13N50BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

 8.2. Size:830K  magnachip
 mdf13n65b.pdf pdf_icon

MDF13N50BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

ПОКАЗАТЬ ЕЩЁ

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