MDF13N65BTH Todos los transistores

 

MDF13N65BTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDF13N65BTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 81 nS

Cossⓘ - Capacitancia de salida: 243 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm

Encapsulados: TO-220F

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MDF13N65BTH datasheet

 ..1. Size:811K  magnachip
 mdf13n65bth.pdf pdf_icon

MDF13N65BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

 5.1. Size:830K  magnachip
 mdf13n65b.pdf pdf_icon

MDF13N65BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

 8.1. Size:1131K  magnachip
 mdf13n50gth mdp13n50gth.pdf pdf_icon

MDF13N65BTH

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip s MOSFET Technology, which provides low on- ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 8.2. Size:1209K  magnachip
 mdf13n50bth mdp13n50bth.pdf pdf_icon

MDF13N65BTH

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5 General Description Features The MDP/F13N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

MOSTRAR MÁS

Otros transistores... MDF10N60GTH , MDF10N65BTH , MDF11N60TH , MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH , AO3400 , MDF15N60GTH , MDF16N50GTH , MDF18N50BTH , MDF1903TH , MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH .

History: BUK952R3-40E | MDF18N50BTH

 

 

 

 

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