All MOSFET. MDF13N65BTH Datasheet

 

MDF13N65BTH Datasheet and Replacement


   Type Designator: MDF13N65BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 54 nC
   tr ⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 243 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO-220F
 

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MDF13N65BTH Datasheet (PDF)

 ..1. Size:811K  magnachip
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MDF13N65BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 5.1. Size:830K  magnachip
 mdf13n65b.pdf pdf_icon

MDF13N65BTH

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 8.1. Size:1131K  magnachip
 mdf13n50gth mdp13n50gth.pdf pdf_icon

MDF13N65BTH

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 8.2. Size:1209K  magnachip
 mdf13n50bth mdp13n50bth.pdf pdf_icon

MDF13N65BTH

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5General Description Features The MDP/F13N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

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History: VN10LP | PHD55N03LTA

Keywords - MDF13N65BTH MOSFET datasheet

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