MDF18N50BTH MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MDF18N50BTH datasheet

..1. Size:1244K magnachip
mdf18n50bth mdp18n50bth.pdf pdf_icon

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

..2. Size:245K inchange semiconductor
mdf18n50bth.pdf pdf_icon

isc N-Channel MOSFET Transistor MDF18N50BTH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

6.1. Size:819K magnachip
mdf18n50.pdf pdf_icon

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GS MDF18N50 is suitable device for SMPS, high speed switching Applications and general

6.2. Size:245K inchange semiconductor
mdf18n50th.pdf pdf_icon

isc N-Channel MOSFET Transistor MDF18N50TH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

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