Справочник MOSFET. MDF18N50BTH

 

MDF18N50BTH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MDF18N50BTH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 82 ns
   Cossⓘ - Выходная емкость: 307 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для MDF18N50BTH

   - подбор ⓘ MOSFET транзистора по параметрам

 

MDF18N50BTH Datasheet (PDF)

 ..1. Size:1244K  magnachip
mdf18n50bth mdp18n50bth.pdfpdf_icon

MDF18N50BTH

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27General Description Features The MDP/F18N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

 ..2. Size:245K  inchange semiconductor
mdf18n50bth.pdfpdf_icon

MDF18N50BTH

isc N-Channel MOSFET Transistor MDF18N50BTHFEATURES Drain-source on-resistance:RDS(on) 0.27 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower SupplyHigh Current, High Speed SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 6.1. Size:819K  magnachip
mdf18n50.pdfpdf_icon

MDF18N50BTH

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GSMDF18N50 is suitable device for SMPS, high speed switching Applications and general

 6.2. Size:245K  inchange semiconductor
mdf18n50th.pdfpdf_icon

MDF18N50BTH

isc N-Channel MOSFET Transistor MDF18N50THFEATURES Drain-source on-resistance:RDS(on) 0.27 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower SupplyHigh Current, High Speed SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Другие MOSFET... MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH , MDF13N65BTH , MDF15N60GTH , MDF16N50GTH , IRFB4227 , MDF1903TH , MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH , MDF4N60BTH , MDF4N60DTH , MDF4N60TH .

History: IRF252 | DH019N04B | IRFP244A | MDP2N60TP | NDF11N50Z | 2SK4125 | MDF4N65BTH

 

 
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