MDF2N60TH Todos los transistores

 ..1. Size:1080K  magnachip
 mdf2n60th mdf2n60tp mdp2n60th mdp2n60tp.pdf

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GS state resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for SM

 7.1. Size:861K  magnachip
 mdf2n60bth.pdf

MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 2.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SMP

 9.1. Size:102K  motorola
 mmdf2n06vl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2N06VL/D Product Preview MMDF2N06VL TMOS V SO-8 for Surface Mount N Channel Enhancement Mode Silicon Gate DUAL TMOS MOSFET TMOS V is a new technology designed to achieve an on resis- 2.5 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than doubles the p

 9.2. Size:196K  motorola
 mmdf2n05z.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2N05ZR2/D Designer's Data Sheet MMDF2N05ZR2 Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS POWER MOSFET Protected Gate 2.0 AMPERES 50 VOLTS EZFETs are an advanced series of power MOSFETs which RDS(on) = 0.300 OHM utilize Motorola s High

 9.3. Size:101K  motorola
 mmdf2n06v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2N06V/D Product Preview MMDF2N06V TMOS V SO-8 for Surface Mount N Channel Enhancement Mode Silicon Gate DUAL TMOS MOSFET TMOS V is a new technology designed to achieve an on resis- 3.3 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than doubles the pre

 9.4. Size:273K  motorola
 mmdf2n05.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2N05ZR2/D Advance Information MMDF2N05ZR2 Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS POWER MOSFET Protected Gate 2.0 AMPERES EZFETs are an advanced series of power MOSFETs which 50 VOLTS utilize Motorola s High Cell Density TMOS proces

 9.5. Size:191K  motorola
 mmdf2n05zr2rev1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2N05ZR2/D Designer's Data Sheet MMDF2N05ZR2 Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD DUAL TMOS POWER MOSFET Protected Gate 2.0 AMPERES 50 VOLTS EZFETs are an advanced series of power MOSFETs which RDS(on) = 0.300 OHM utilize Motorola s High

 9.6. Size:235K  motorola
 mmdf2n02e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2N02E/D Designer's Data Sheet MMDF2N02E Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.6 AMPERES which utilize Motorola s TMOS process. These miniature surface 25 VOLTS mount MOSFETs feature ultra low

 9.7. Size:276K  motorola
 mmdf2n02.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF2N02E/D Designer's Data Sheet MMDF2N02E Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.6 AMPERES which utilize Motorola s TMOS process. These miniature surface 25 VOLTS mount MOSFETs feature ultra low

 9.8. Size:94K  onsemi
 mmdf2n02e.pdf

MMDF2N02E Power MOSFET 2 Amps, 25 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. MiniMOSt 2 AMPERES, 25 VOLTS devices are designed for use in lo