MDF2N60TH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDF2N60TH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 22.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.7
nC
trⓘ - Rise Time: 29.6
nS
Cossⓘ -
Output Capacitance: 32
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5
Ohm
Package:
TO-220F
MDF2N60TH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDF2N60TH
Datasheet (PDF)
..1. Size:1080K magnachip
mdf2n60th mdf2n60tp mdp2n60th mdp2n60tp.pdf 
MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM
7.1. Size:861K magnachip
mdf2n60bth.pdf
MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 2.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SMP
9.1. Size:102K motorola
mmdf2n06vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06VL/DProduct PreviewMMDF2N06VLTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-2.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the p
9.2. Size:196K motorola
mmdf2n05z.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DDesigner's Data SheetMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate2.0 AMPERES50 VOLTSEZFETs are an advanced series of power MOSFETs whichRDS(on) = 0.300 OHMutilize Motorolas High
9.3. Size:101K motorola
mmdf2n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06V/DProduct PreviewMMDF2N06VTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-3.3 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the pre
9.4. Size:273K motorola
mmdf2n05.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DAdvance InformationMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate 2.0 AMPERESEZFETs are an advanced series of power MOSFETs which50 VOLTSutilize Motorolas High Cell Density TMOS proces
9.5. Size:191K motorola
mmdf2n05zr2rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DDesigner's Data SheetMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate2.0 AMPERES50 VOLTSEZFETs are an advanced series of power MOSFETs whichRDS(on) = 0.300 OHMutilize Motorolas High
9.6. Size:235K motorola
mmdf2n02e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N02E/DDesigner's Data SheetMMDF2N02EMedium Power Surface Mount ProductsTMOS Dual N-ChannelField Effect TransistorsDUAL TMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs3.6 AMPERESwhich utilize Motorolas TMOS process. These miniature surface25 VOLTSmount MOSFETs feature ultra low
9.7. Size:276K motorola
mmdf2n02.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N02E/DDesigner's Data SheetMMDF2N02EMedium Power Surface Mount ProductsTMOS Dual N-ChannelField Effect TransistorsDUAL TMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs3.6 AMPERESwhich utilize Motorolas TMOS process. These miniature surface25 VOLTSmount MOSFETs feature ultra low
9.8. Size:94K onsemi
mmdf2n02e.pdf
MMDF2N02EPower MOSFET2 Amps, 25 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a low reverse recovery time. MiniMOSt2 AMPERES, 25 VOLTSdevices are designed for use in lo
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