MDF7N65BTH Todos los transistores

 

MDF7N65BTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDF7N65BTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32.6 nS

Cossⓘ - Capacitancia de salida: 85.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm

Encapsulados: TO-220F

 Búsqueda de reemplazo de MDF7N65BTH MOSFET

- Selecciónⓘ de transistores por parámetros

 

MDF7N65BTH datasheet

 ..1. Size:840K  magnachip
 mdf7n65bth.pdf pdf_icon

MDF7N65BTH

MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

 8.1. Size:1118K  magnachip
 mdf7n60bth mdp7n60bth.pdf pdf_icon

MDF7N65BTH

MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- V = 660V @ T DS jmax state resistance, high switching performance and excellent I = 7.0A @ V = 10V D GS quality. RDS(ON) 1.15 @ VGS = 10V Applications These devices

 9.1. Size:190K  motorola
 mmdf7n02zrev0.pdf pdf_icon

MDF7N65BTH

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2

 9.2. Size:195K  motorola
 mmdf7n02z.pdf pdf_icon

MDF7N65BTH

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2

MOSTRAR MÁS

Otros transistores... MDF5N50FBTH , MDF5N50FTH , MDF5N50ZTH , MDF6N60BTH , MDF6N60TH , MDF6N65BTH , MDF7N50BTH , MDF7N60BTH , 4435 , MDF8N60BTH , MDF9N50BTH , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP .

History: GC11N65K | APT50M60JVR | DMP4013LFG

 

 

 

 

↑ Back to Top
.