MDF7N65BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDF7N65BTH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 42 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 18.4 nC
Время нарастания (tr): 32.6 ns
Выходная емкость (Cd): 85.4 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.35 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MDF7N65BTH
MDF7N65BTH Datasheet (PDF)
mdf7n65bth.pdf
MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic
mdf7n60bth mdp7n60bth.pdf
MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- V = 660V @ T DS jmaxstate resistance, high switching performance and excellent I = 7.0A @ V = 10V D GSquality. RDS(ON) 1.15 @ VGS = 10V Applications These devices
mmdf7n02zrev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/DAdvance InformationMMDF7N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESD Protected GateDUAL TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which7.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain2
mmdf7n02z.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/DAdvance InformationMMDF7N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESD Protected GateDUAL TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which7.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain2
mdf7n50bth mdp7n50bth.pdf
MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9General Description Features The MDP/F7N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an
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