MDF9N50BTH Todos los transistores

 ..1. Size:1150K  magnachip
 mdf9n50bth mdp9n50bth.pdf

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP/F9N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 ..2. Size:252K  inchange semiconductor
 mdf9n50bth.pdf

isc N-Channel MOSFET Transistor MDF9N50BTH FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:817K  magnachip
 mdf9n50fth.pdf

MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GS resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp

 9.1. Size:781K  magnachip
 mdf9n60bth.pdf

MDF9N60B N-Channel MOSFET 600V, 9A, 0.80 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.80 @ VGS = 10V quality. Applications These devices are suitable device for SMP