MDF9N50BTH - описание и поиск аналогов

 

MDF9N50BTH. Аналоги и основные параметры

Наименование производителя: MDF9N50BTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27.3 ns

Cossⓘ - Выходная емкость: 101 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm

Тип корпуса: TO-220F

Аналог (замена) для MDF9N50BTH

- подборⓘ MOSFET транзистора по параметрам

 

MDF9N50BTH даташит

 ..1. Size:1150K  magnachip
mdf9n50bth mdp9n50bth.pdfpdf_icon

MDF9N50BTH

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP/F9N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 ..2. Size:252K  inchange semiconductor
mdf9n50bth.pdfpdf_icon

MDF9N50BTH

isc N-Channel MOSFET Transistor MDF9N50BTH FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:817K  magnachip
mdf9n50fth.pdfpdf_icon

MDF9N50BTH

MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GS resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp

 9.1. Size:781K  magnachip
mdf9n60bth.pdfpdf_icon

MDF9N50BTH

MDF9N60B N-Channel MOSFET 600V, 9A, 0.80 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.80 @ VGS = 10V quality. Applications These devices are suitable device for SMP

Другие MOSFET... MDF5N50ZTH , MDF6N60BTH , MDF6N60TH , MDF6N65BTH , MDF7N50BTH , MDF7N60BTH , MDF7N65BTH , MDF8N60BTH , SKD502T , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH .

History: AP20T15GI | IPD60R280P7 | JMPF7N65BJ | EM6K34

 

 

 

 

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