MDF9N50FTH MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MDF9N50FTH datasheet

..1. Size:817K magnachip
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MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GS resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp

7.1. Size:1150K magnachip
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MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP/F9N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

7.2. Size:252K inchange semiconductor
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isc N-Channel MOSFET Transistor MDF9N50BTH FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

9.1. Size:781K magnachip
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MDF9N60B N-Channel MOSFET 600V, 9A, 0.80 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.80 @ VGS = 10V quality. Applications These devices are suitable device for SMP

Otros transistores... MDF6N60BTH , MDF6N60TH , MDF6N65BTH , MDF7N50BTH , MDF7N60BTH , MDF7N65BTH , MDF8N60BTH , MDF9N50BTH , K4145 , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH .