All MOSFET. MDF9N50FTH Datasheet

 

MDF9N50FTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDF9N50FTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.3 nC
   trⓘ - Rise Time: 47.5 nS
   Cossⓘ - Output Capacitance: 96.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-220F

 MDF9N50FTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDF9N50FTH Datasheet (PDF)

 ..1. Size:817K  magnachip
 mdf9n50fth.pdf

MDF9N50FTH MDF9N50FTH

MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GSresistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp

 7.1. Size:1150K  magnachip
 mdf9n50bth mdp9n50bth.pdf

MDF9N50FTH MDF9N50FTH

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 7.2. Size:252K  inchange semiconductor
 mdf9n50bth.pdf

MDF9N50FTH MDF9N50FTH

isc N-Channel MOSFET Transistor MDF9N50BTHFEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:781K  magnachip
 mdf9n60bth.pdf

MDF9N50FTH MDF9N50FTH

MDF9N60B N-Channel MOSFET 600V, 9A, 0.80General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.80 @ VGS = 10V quality. Applications These devices are suitable device for SMP

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WSP16N10

 

 
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