MDF9N50FTH MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

MDF9N50FTH Specs and Replacement

Type Designator: MDF9N50FTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 16.3 nC

tr ⓘ - Rise Time: 47.5 nS

Cossⓘ - Output Capacitance: 96.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220F

MDF9N50FTH substitution

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MDF9N50FTH datasheet

..1. Size:817K magnachip
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MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GS resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp... See More ⇒

7.1. Size:1150K magnachip
mdf9n50bth mdp9n50bth.pdf pdf_icon

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP/F9N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo... See More ⇒

7.2. Size:252K inchange semiconductor
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isc N-Channel MOSFET Transistor MDF9N50BTH FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

9.1. Size:781K magnachip
mdf9n60bth.pdf pdf_icon

MDF9N60B N-Channel MOSFET 600V, 9A, 0.80 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.80 @ VGS = 10V quality. Applications These devices are suitable device for SMP... See More ⇒

Detailed specifications: MDF6N60BTH, MDF6N60TH, MDF6N65BTH, MDF7N50BTH, MDF7N60BTH, MDF7N65BTH, MDF8N60BTH, MDF9N50BTH, K4145, MDF9N60BTH, MDFS10N60DTH, MDFS4N65DTH, MDH3331RH, MDH3331RP, MDHT3N40URH, MDHT4N20YURH, MDHT4N25URH