MDF9N60BTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDF9N60BTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 23.9 nC
   trⓘ - Tiempo de subida: 33.4 nS
   Cossⓘ - Capacitancia de salida: 134 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-220F

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MDF9N60BTH Datasheet (PDF)

..1. Size:781K magnachip
mdf9n60bth.pdf

MDF9N60B N-Channel MOSFET 600V, 9A, 0.80General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.80 @ VGS = 10V quality. Applications These devices are suitable device for SMP

9.1. Size:1150K magnachip
mdf9n50bth mdp9n50bth.pdf

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

9.2. Size:817K magnachip
mdf9n50fth.pdf

MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GSresistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp

9.3. Size:252K inchange semiconductor
mdf9n50bth.pdf

isc N-Channel MOSFET Transistor MDF9N50BTHFEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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