Справочник MOSFET. MDF9N60BTH

 

MDF9N60BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDF9N60BTH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 33.4 ns
   Cossⓘ - Выходная емкость: 134 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO-220F

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MDF9N60BTH Datasheet (PDF)

 ..1. Size:781K  magnachip
 mdf9n60bth.pdf

MDF9N60BTH MDF9N60BTH

MDF9N60B N-Channel MOSFET 600V, 9A, 0.80General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.80 @ VGS = 10V quality. Applications These devices are suitable device for SMP

 9.1. Size:1150K  magnachip
 mdf9n50bth mdp9n50bth.pdf

MDF9N60BTH MDF9N60BTH

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

 9.2. Size:817K  magnachip
 mdf9n50fth.pdf

MDF9N60BTH MDF9N60BTH

MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GSresistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp

 9.3. Size:252K  inchange semiconductor
 mdf9n50bth.pdf

MDF9N60BTH MDF9N60BTH

isc N-Channel MOSFET Transistor MDF9N50BTHFEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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