MDI5N40TH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDI5N40TH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 46 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Encapsulados: TO-251
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MDI5N40TH datasheet
mdd5n40rh mdi5n40th.pdf
MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachip s MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur
mdi5n40th.pdf
isc N-Channel MOSFET Transistor MDI5N40TH FEATURES Drain Current I = 3.4A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
mdi5n40rh.pdf
isc N-Channel MOSFET Transistor MDI5N40RH FEATURES Drain Current I = 3.4A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
Otros transistores... MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , TK10A60D , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH .
History: BSP100 | BLF7G22L-130
History: BSP100 | BLF7G22L-130
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