All MOSFET. MDI5N40TH Datasheet

 

MDI5N40TH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDI5N40TH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 46 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO-251

MDI5N40TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDI5N40TH Datasheet (PDF)

0.1. mdd5n40rh mdi5n40th.pdf Size:865K _magnachip

MDI5N40TH
MDI5N40TH

 MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω Ω Ω Ω General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachip’s MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) ≤ 1.6Ω and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur

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