MDI6N60BTH Todos los transistores

 ..1. Size:789K  magnachip
 mdi6n60bth.pdf

MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45 General Description Features The MDI6N60B uses advanced MagnaChip s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.45 @ VGS = 10V MDI6N60B is suitable device for SMPS, high Speed Applications swi

 8.1. Size:796K  magnachip
 mdi6n65bth.pdf

MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45 General Description Features The MDI6N65B use advanced Magnachip s VDS = 650V MOSFET Technology, which provides low on-state ID = 5.7A @VGS = 10V resistance, high switching performance and RDS(ON) 1.45 @VGS = 10V excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Applicat

 8.2. Size:321K  inchange semiconductor
 mdi6n65bth.pdf

isc N-Channel MOSFET Transistor MDI6N65BTH FEATURES Drain Current I = 5.7A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol