MDI6N60BTH Datasheet and Replacement

MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45General Description Features The MDI6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.45 @ VGS = 10V MDI6N60B is suitable device for SMPS, high Speed Applications swi

MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45General Description Features The MDI6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state ID = 5.7A @VGS = 10V resistance, high switching performance and RDS(ON) 1.45 @VGS = 10V excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Applicat

isc N-Channel MOSFET Transistor MDI6N65BTHFEATURESDrain Current : I = 5.7A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol