MDIS1903TH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDIS1903TH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10.6 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
Encapsulados: TO-251-VS
Búsqueda de reemplazo de MDIS1903TH MOSFET
- Selecciónⓘ de transistores por parámetros
MDIS1903TH datasheet
mdis1903th.pdf
MDIS1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDIS1903 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 12.8A @V = 10V D GS resistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDIS1903 is suitable device for DC to DC
mdis1502th.pdf
MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDIS1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1502 is suitable device for DC to DC
mdis1501th.pdf
MDIS1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6m General Description Features The MDIS1501 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 67.4A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1501 is suitable device for DC to DC
Otros transistores... MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , 2SK3568 , MDIS2N60TH , MDIS2N65BTH , MDIS3N40TH , MDIS4N65BTH , MDIS5N40TH , MDIS5N50TH , MDP10N50TH , MDP10N60GTH .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
60n60 | 2n5485 equivalent | 2sa1941 | 2sc485 | 2sd287 | 2sd438 | a1492 | hy4008