MDIS1903TH Datasheet. Specs and Replacement

Type Designator: MDIS1903TH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.6 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO-251-VS

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MDIS1903TH datasheet

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MDIS1903TH

MDIS1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDIS1903 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 12.8A @V = 10V D GS resistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDIS1903 is suitable device for DC to DC ... See More ⇒

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MDIS1903TH

MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDIS1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1502 is suitable device for DC to DC ... See More ⇒

 9.2. Size:704K  magnachip
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MDIS1903TH

MDIS1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6m General Description Features The MDIS1501 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 67.4A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1501 is suitable device for DC to DC ... See More ⇒

Detailed specifications: MDI2N60, MDI4N60BTH, MDI5N40TH, MDI6N60BTH, MDI6N65BTH, MDIB6N70CTH, MDIS1501TH, MDIS1502TH, IRF1407, MDIS2N60TH, MDIS2N65BTH, MDIS3N40TH, MDIS4N65BTH, MDIS5N40TH, MDIS5N50TH, MDP10N50TH, MDP10N60GTH

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