MDIS1903TH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDIS1903TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10.6 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO-251-VS
MDIS1903TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDIS1903TH Datasheet (PDF)
mdis1903th.pdf
MDIS1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDIS1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12.8A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDIS1903 is suitable device for DC to DC
mdis1502th.pdf
MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDIS1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1502 is suitable device for DC to DC
mdis1501th.pdf
MDIS1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mGeneral Description Features The MDIS1501 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 67.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1501 is suitable device for DC to DC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NDB7060L
History: NDB7060L
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